Paper/Engineering – Industrial Engineering Novel Generic Analysis Model of Fractance response DETERMINING OF PRODUCTION FACTORS FOR PLASTIC BOX USING TAGUCHI The probabilistic modeling of random variation in FGMOSFET The resources optimization of head stack assembly production line by simulation technique Related
Paper/Engineering – Industrial Engineering
- Productivity Improvement in Paper Quality Sorting Process Case Study SCG Packaging PCL
- Improvement of Warehouse Management Efficiency Case Study: P.K. Boiler Co., Ltd
- Alpha Power Law Based Model of Random Variation in Nanometer FGMOSFET
- Novel Expressions for Time Domain Responses of Fractance Device
- Probabilistic Modelling of Variation in FGMOSFET Devices
Paper industry is very competitive. As a key manufacture in Thailand, SCG Packaging PCL have to continuously improve their production processes. In this project, the paper quality sorting process was chosen. First, a work study was carried out to study the time of each step and to identify the bottle-neck step of the process. From the study, the bottle-neck process came from the worker is not balance with the machine and work instructions were too complicated because it has to use human visual inspection only, which is time consuming. Therefore, to improve this process, the web inspection tool is introduced to reduce the complexity of visual inspection step. After the work instructions was changed, another improvement was proposed which is to do planning of their daily operations by using scheduling techniques. From this scheduling optimization, we can allocate additional operation period of 1 hours per day, and we can eliminate the bottle-neck step. This study can improve the process productivity by 35% and reduce loss cost up to 24,637.5 Baht per year.
Keywords : Work Study, Productivity Improvement, Production Planning
The author has studied warehouse operation of P K Boiler Co., Ltd. And found that, the low efficiency in the warehouse operation (i.e. item disbursement process) cause delay in subsequent processes. Therefore, the goals of this project were set to improve warehouse disbursement process time. The improvement were carried out using techniques including process flow chart to eliminate redundant and inefficient steps, improve storage location, organize items into categories, introduce visual control by coloring the storage shelves, create item stock cards with arrow to indicate the item’s location. As a result, the disbursement process time was reduced from 700 minutes to 220 minutes, which is 68.57% improvement. In addition, as an indirect benefit, the project also reduces disbursement mistake and item damage as well.
Keywords: Productivity Improvement, Warehouse Management, Work Study
The alpha power law based model of random variation in drain current of an unconventional MOSFET namely Floating-Gate MOSFET (FGMOSFET) has been proposed where the nanometer level technology has been focused. The process induced device level random variations and their statistical correlations have been taken into account. The model has been found to be very accurate since it can accurately fit the 65 nm SPICE BSIM4 based reference obtained by using Monte-Carlo SPICE. So, it has been found to be efficient for the variability aware analysis and design of FGMOSFET based circuit at nanometer regime.
Keywords—alpha power law; CMOS; circuit; FGMOSFET; nanometer
In this research, many novel expressions for time domain responses of fractance device to various often cited inputs have been proposed. Unlike the previous ones, our expressions have been derived based on the Caputo fractional derivative by also concerning the dimensional consistency with the integer order device based responses and the different between two types of fractance device i.e. fractional order inductor and fractional order capacitor. These previous expressions have been derived based on the Riemann-Liouvielle fractional derivative which has certain features that leads to contradictions and additional modeling difficulties unlike the Caputo fractional derivative. Our new expressions are applicable to both fractional order inductor and capacitor with arbitrary order. They are also applicable to any subject which its electrical characteristic can be modeled based on the fractance device. With our expressions and numerical simulations, the time domain behavioral analysis of both fractance device and such subject can be directly performed without requiring any time to frequency domain conversion and its inverse as already presented in this work. Therefore our work has been found to be beneficial to various fractance device related disciplines e.g. biomedical engineering, control system, electronic circuit and electrical engineering etc.
The analytical probabilistic modelling of random variation in the drain current of a Floating-Gate MOSFET (FGMOSFET) induced by manufacturing process variations has been performed. Both triode and saturation region operated FGMOSFETs have been considered. The results have been found to be very efficient since they can accurately fit the probabilistic distributions of normalized random drain current variations of the candidate triode and saturation FGMOSFETs obtained using the 0.25μm level BSIM3v3 based Monte-Carlo SPICE simulations, where the variation of the saturation FGMOSFET has been found to be more severe. These results also satisfy the goodness of fit test at a very high level of confidence and more accurately than the results of the previous probabilistic modelling attempts. Using our results, many statistical parameters, probabilities and the objective functions, which are useful in statistical/variability aware analysis and design involving FGMOSFETs can be formulated. The impact of drain current variation upon the design trade-offs can be studied. It has been found that the occurrence of the drain current variation is absolutely certain. Moreover, the analytical probabilistic modelling and computationally efficient statistical/ variability aware simulation of FGMOSFET based circuits can also be performed.
Keywords: FGMOSFET, Probabilistic Modelling, Saturation Region, Statistical/variability Aware Analysis and Design, Triode Region by : Rawid Banchuin, Roungsan Chaisricharoen 2017 : https://www.tci-thaijo.org/index.php/ecticit/article/view/63429/71218